onsemi NVMFD5C470NWFT1G

onsemi · FETs & Power MOSFETs · MPN NVMFD5C470NWFT1G

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Specifications

Current - Continuous Drain(Id)36A
RDS(on)9.75mΩ@10V
Pd - Power Dissipation28W
Gate Threshold Voltage (Vgs(th))3.5V
Drain to Source Voltage40V
Reverse Transfer Capacitance (Crss@Vds)11pF
Number2 N-Channel
Input Capacitance(Ciss)420pF
Gate Charge(Qg)8nC@10V
Operating Temperature-55℃~+175℃

Technical details

36A 9.75mΩ@10V 28W 3.5V 2 N-Channel DFN-8(4.9x5.9) FET, MOSFET Arrays RoHS

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