onsemi NVMFD5C470NLWFT1G

onsemi · FETs & Power MOSFETs · MPN NVMFD5C470NLWFT1G

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Specifications

Current - Continuous Drain(Id)11A;36A
RDS(on)11.5mΩ@10V
Pd - Power Dissipation-
Gate Threshold Voltage (Vgs(th))2.2V
Drain to Source Voltage40V
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)590pF
Gate Charge(Qg)4nC@4.5V
Operating Temperature-55℃~+175℃

Technical details

11.5mΩ@10V 2.2V 2 N-Channel DFN-8(5x6) FET, MOSFET Arrays RoHS

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