onsemi NVMFD5877NLT3G

onsemi · FETs & Power MOSFETs · MPN NVMFD5877NLT3G

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.2W
RDS(on)39mΩ@10V
Input Capacitance(Ciss)540pF

Technical details

60V 6A 3V 3.2W 39mΩ@10V DFN-8(5x6) Single FETs, MOSFETs RoHS

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