onsemi · FETs & Power MOSFETs · MPN NVMFD5877NLT1G
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| Gate Charge(Qg) | 5.9nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| RDS(on) | 39mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 540pF |
60V 17A 39mΩ@10V 2 N-Channel DFN-8(5.2x5.5) Single FETs, MOSFETs RoHS