onsemi · FETs & Power MOSFETs · MPN NVMFD5873NLWFT1G
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| Gate Charge(Qg) | 16.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 98pF |
| RDS(on) | 10.7mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.56nF |
60V 10A 2.5V 3.1W 10.7mΩ@10V 2 N-Channel DFN-8 Single FETs, MOSFETs RoHS