onsemi · FETs & Power MOSFETs · MPN NVMFD5853NT1G
No reviews yet — be the first to review onsemi NVMFD5853NT1G.
| Gate Charge(Qg) | 24nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 53A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 8.4mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.225nF |
40V 53A 4V 8.4mΩ@10V 2 N-Channel DFN-8(4.9x5.9) Single FETs, MOSFETs RoHS