onsemi · FETs & Power MOSFETs · MPN NVMFD5852NLT1G
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| Gate Charge(Qg) | 20nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 3.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF |
| RDS(on) | 5.3mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
40V 2.4V 3.2W 5.3mΩ@10V 2 N-Channel DFN-8(4.9x5.9) Single FETs, MOSFETs RoHS