onsemi · FETs & Power MOSFETs · MPN NVMFD016N06CT1G
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| Current - Continuous Drain(Id) | 32A |
|---|---|
| RDS(on) | 13.6mΩ@10V |
| Pd - Power Dissipation | 36W |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Drain to Source Voltage | 60V |
| Reverse Transfer Capacitance (Crss@Vds) | 5.7pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 489pF |
| Gate Charge(Qg) | 6.9nC@10V |
| Operating Temperature | -55℃~+175℃ |
32A 13.6mΩ@10V 36W 4V 2 N-Channel SO-8FL FET, MOSFET Arrays RoHS