onsemi · FETs & Power MOSFETs · MPN NVMD3P03R2G
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 25nC@10V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 135pF |
| RDS(on) | 85mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 750pF |
30V 35A 1V 2W 85mΩ@10V 1 P-Channel SOIC-8 Single FETs, MOSFETs RoHS