onsemi · FETs & Power MOSFETs · MPN NVLUS4C12NTAG
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| Gate Charge(Qg) | 8.4nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 10.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 1.54W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 7.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.172nF |
30V 10.7A 2.1V 1.54W 7.2mΩ@10V 1 N-channel DFN-6-EP(2x2) Single FETs, MOSFETs RoHS