onsemi · FETs & Power MOSFETs · MPN NVLJWS013N03CLTAG
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| Gate Charge(Qg) | 4nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 13mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 600pF |
30V 35A 2V 13mΩ@10V 1 N-channel WDFNW-6(2.05x2.05) Single FETs, MOSFETs RoHS