onsemi · FETs & Power MOSFETs · MPN NVJD5121NT1G-M06
No reviews yet — be the first to review onsemi NVJD5121NT1G-M06.
| Current - Continuous Drain(Id) | 295mA |
|---|---|
| Pd - Power Dissipation | 250mW |
| RDS(on) | 1.6Ω@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 26pF |
| Gate Charge(Qg) | 900pC@4.5V |
| Operating Temperature | -55℃~+150℃ |
295mA 250mW 1.6Ω@10V 2.5V 2 N-Channel SC-88 FET, MOSFET Arrays RoHS