onsemi NVJD4401NT1G

onsemi · FETs & Power MOSFETs · MPN NVJD4401NT1G

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Specifications

Current - Continuous Drain(Id)630mA
RDS(on)360mΩ@2.5V
Pd - Power Dissipation270mW
Gate Threshold Voltage (Vgs(th))600mV
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)5pF
Number2 N-Channel
Input Capacitance(Ciss)46pF
Gate Charge(Qg)3nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 20V 0.63A 0.27W Surface Mount SC-88

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