onsemi · FETs & Power MOSFETs · MPN NVJD4401NT1G
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| Current - Continuous Drain(Id) | 630mA |
|---|---|
| RDS(on) | 360mΩ@2.5V |
| Pd - Power Dissipation | 270mW |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Drain to Source Voltage | 20V |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 46pF |
| Gate Charge(Qg) | 3nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 20V 0.63A 0.27W Surface Mount SC-88