onsemi · FETs & Power MOSFETs · MPN NVJD4158CT1G
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| Current - Continuous Drain(Id) | 250mA |
|---|---|
| RDS(on) | 1Ω@4.5V |
| Pd - Power Dissipation | 270mW |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Drain to Source Voltage | 30V |
| Reverse Transfer Capacitance (Crss@Vds) | 7.25pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 20pF |
| Gate Charge(Qg) | 900pC@5V |
| Operating Temperature | -55℃~+150℃ |
250mA 1Ω@4.5V 270mW 800mV 1 N-Channel + 1 P-Channel SC-88-6 FET, MOSFET Arrays RoHS