onsemi NVHL050N65S3HF

onsemi · FETs & Power MOSFETs · MPN NVHL050N65S3HF

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Specifications

Gate Charge(Qg)119nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)58A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation403W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)41mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.88nF

Technical details

N-Channel 650V 58A 403W Through Hole TO-247

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