onsemi NVH4L080N120SC1

onsemi · FETs & Power MOSFETs · MPN NVH4L080N120SC1

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Specifications

Gate Charge(Qg)56nC
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)29A
Output Capacitance(Coss)120pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.3V
Pd - Power Dissipation170W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)110mΩ
Number1 N-channel
Input Capacitance(Ciss)1.67nF
TypeN-Channel

Technical details

1.2kV 29A 4.3V 170W 110mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs RoHS

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