onsemi NVH4L022N120M3S

onsemi · FETs & Power MOSFETs · MPN NVH4L022N120M3S

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Specifications

Gate Charge(Qg)151nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)146pF
Current - Continuous Drain(Id)68A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.4V
Pd - Power Dissipation352W
RDS(on)30mΩ
Reverse Transfer Capacitance (Crss@Vds)12pF
Number1 N-channel
Input Capacitance(Ciss)3.175nF
TypeN-Channel

Technical details

N-Channel 1.2kV 68A 352W Through Hole TO-247-4L

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