onsemi · FETs & Power MOSFETs · MPN NVH050N65S3F
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| Gate Charge(Qg) | 123nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 58A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 403W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.404nF |
| Type | N-Channel |
650V 58A 3V 403W 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS