onsemi · FETs & Power MOSFETs · MPN NVGS4111PT1G
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| Gate Charge(Qg) | 15.25nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 4.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 1.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF |
| RDS(on) | 38mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 750pF |
30V 4.7A 1.25W 38mΩ@10V 1 P-Channel TSOP-6-1.5mm Single FETs, MOSFETs RoHS