onsemi · FETs & Power MOSFETs · MPN NVF6P02T3G
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| Gate Charge(Qg) | 20nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 8.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 44mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.2nF |
20V 10A 700mV 8.3W 44mΩ@4.5V 1 P-Channel SOT-223-3 Single FETs, MOSFETs RoHS