onsemi · FETs & Power MOSFETs · MPN NVDS015N15MCT4G
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| Gate Charge(Qg) | 27nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 10.5A;61.3A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 3.1W;107.1W |
| RDS(on) | 15mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.12nF |
150V 4.5V 15mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS