onsemi · FETs & Power MOSFETs · MPN NVD6824NLT4G
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| Gate Charge(Qg) | 34nC@4.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 41A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 90W |
| Reverse Transfer Capacitance (Crss@Vds) | 133pF |
| RDS(on) | 16.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.468nF |
100V 41A 2.5V 90W 16.5mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS