onsemi · FETs & Power MOSFETs · MPN NVD6416ANLT4G
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| Gate Charge(Qg) | 40nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 71W |
| RDS(on) | 74mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1nF |
| Type | N-Channel |
100V 19A 2.2V 71W 74mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS