onsemi · FETs & Power MOSFETs · MPN NVD5C688NLT4G
No reviews yet — be the first to review onsemi NVD5C688NLT4G.
| Gate Charge(Qg) | 3.4nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 18W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 27.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 400pF |
60V 17A 1.2V 18W 27.4mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS