onsemi · FETs & Power MOSFETs · MPN NVD5C684NLT4G
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| Output Capacitance(Coss) | 300pF |
|---|---|
| Pd - Power Dissipation | 27W |
| Configuration | - |
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 9.6nC@10V |
| Current - Continuous Drain(Id) | 38A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 16.5mΩ@10V;24.3mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 700pF |
N-Channel Surface Mount DPAK