onsemi NVD5C684NLT4G

onsemi · FETs & Power MOSFETs · MPN NVD5C684NLT4G

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Specifications

Output Capacitance(Coss)300pF
Pd - Power Dissipation27W
Configuration-
Drain to Source Voltage60V
Gate Charge(Qg)9.6nC@10V
Current - Continuous Drain(Id)38A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.1V
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)16.5mΩ@10V;24.3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)700pF

Technical details

N-Channel Surface Mount DPAK

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