onsemi · FETs & Power MOSFETs · MPN NVD5C668NLT4G
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| Gate Charge(Qg) | 8.7nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 49A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 44W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 8.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
N-Channel 60V 49A 44W Surface Mount TO-252(DPAK)