onsemi · FETs & Power MOSFETs · MPN NVD5C648NLT4G
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| Gate Charge(Qg) | 39nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 18A;89A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 3.1W;72W |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| RDS(on) | 3.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.9nF |
N-Channel 60V 18A 89A 3.1W 72W Surface Mount DPAK