onsemi · FETs & Power MOSFETs · MPN NVD5C464NT4G
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 59A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF |
| RDS(on) | 5.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.2nF |
N-Channel 40V 59A 40W Surface Mount DPAK