onsemi · FETs & Power MOSFETs · MPN NVD5C460NT4G
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| Gate Charge(Qg) | 26nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.6nF |
40V 18A 4V 3W 1 N-channel DPAK-3 Single FETs, MOSFETs RoHS