onsemi · FETs & Power MOSFETs · MPN NVD5C460NLT4G
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 36nC@10V |
| Current - Continuous Drain(Id) | 18A;73A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 3W;47W |
| RDS(on) | 4.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.1nF |
40V 2.2V 4.6mΩ@10V 1 N-channel DPAK-3 Single FETs, MOSFETs RoHS