onsemi · FETs & Power MOSFETs · MPN NVD5C454NT4G
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| Gate Charge(Qg) | 32nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 19A;82A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.1W;56W |
| Reverse Transfer Capacitance (Crss@Vds) | 48pF |
| RDS(on) | 3.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.9nF |
40V 4V 3.6mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS