onsemi · FETs & Power MOSFETs · MPN NVD5C446NT4G
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| Gate Charge(Qg) | 34.3nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 22A;105A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.1W;66W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 3.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.3nF |
N-Channel 40V 22A 105A 3.1W 66W Surface Mount TO-252(DPAK)