onsemi · FETs & Power MOSFETs · MPN NVD5890NT4G-VF01
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 74nC@10V |
| Output Capacitance(Coss) | 580pF |
| Current - Continuous Drain(Id) | 123A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 107W |
| RDS(on) | 3.7mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 385pF |
| Input Capacitance(Ciss) | 4.76nF |
| Type | N-Channel |
40V 123A 3.5V 107W 3.7mΩ@10V N-Channel Single FETs, MOSFETs RoHS