onsemi NVD5890NT4G-VF01

onsemi · FETs & Power MOSFETs · MPN NVD5890NT4G-VF01

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)74nC@10V
Output Capacitance(Coss)580pF
Current - Continuous Drain(Id)123A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation107W
RDS(on)3.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)385pF
Input Capacitance(Ciss)4.76nF
TypeN-Channel

Technical details

40V 123A 3.5V 107W 3.7mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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