onsemi · FETs & Power MOSFETs · MPN NVD5867NLT4G
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 22A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 43W |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF |
| RDS(on) | 39mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 675pF |
60V 22A 1.5V 43W 39mΩ@10V 1 N-channel DPAK-3 Single FETs, MOSFETs RoHS