onsemi · FETs & Power MOSFETs · MPN NVD5863NLT4G
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| Gate Charge(Qg) | - |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 350pF |
| Current - Continuous Drain(Id) | 82A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 48W |
| Reverse Transfer Capacitance (Crss@Vds) | 220pF |
| RDS(on) | 9mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.85nF |
60V 82A 3V 48W 9mΩ@4.5V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS