onsemi NVD5117PLT4G-VF01

onsemi · FETs & Power MOSFETs · MPN NVD5117PLT4G-VF01

No reviews yet — be the first to review onsemi NVD5117PLT4G-VF01.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)49nC@4.5V
Current - Continuous Drain(Id)61A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation118W
Reverse Transfer Capacitance (Crss@Vds)320pF
RDS(on)16mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.8nF

Technical details

P-Channel 60V 61A 118W Surface Mount DPAK

Related FETs & Power MOSFETs