onsemi · FETs & Power MOSFETs · MPN NVD5117PLT4G
5.0/5 from 1 engineer review.
| Gate Charge(Qg) | 49nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 61A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 118W |
| Reverse Transfer Capacitance (Crss@Vds) | 320pF |
| RDS(on) | - |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.8nF |
60V 61A 2.5V 118W 1 P-Channel TO-252-2 Single FETs, MOSFETs RoHS