onsemi · FETs & Power MOSFETs · MPN NVD4808NT4G
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 26nC@11.5V |
| Output Capacitance(Coss) | 334pF |
| Current - Continuous Drain(Id) | 63A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 54.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF |
| RDS(on) | 12.4mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.538nF |
| Type | N-Channel |
30V 63A 2.5V 54.6W 12.4mΩ@4.5V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS