onsemi · FETs & Power MOSFETs · MPN NVD4806NT4G-VF01
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 37nC@11.5V |
| Current - Continuous Drain(Id) | 11.3A;79A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.4W;68W |
| RDS(on) | 6mΩ@11.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.142nF |
30V 2.5V 6mΩ@11.5V 1 N-channel DPAK-3 Single FETs, MOSFETs RoHS