onsemi · FETs & Power MOSFETs · MPN NVD360N65S3T4G
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 16.8nC@10V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.53pF |
| RDS(on) | 360mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 756pF |
| Type | N-Channel |
N-Channel 650V 10A 83W Surface Mount DPAK