onsemi · FETs & Power MOSFETs · MPN NVD3055L170T4G
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 28.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| RDS(on) | 170mΩ@5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 275pF |
60V 9A 1.7V 28.5W 170mΩ@5V 1 N-channel TO-252-2 Single FETs, MOSFETs RoHS