onsemi NVD2955T4G

onsemi · FETs & Power MOSFETs · MPN NVD2955T4G

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)30nC@10V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)155mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)750pF

Technical details

P-Channel 60V 12A 55W Surface Mount TO-252(DPAK)

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