onsemi · FETs & Power MOSFETs · MPN NVD260N65S3T4G
No reviews yet — be the first to review onsemi NVD260N65S3T4G.
| Gate Charge(Qg) | 23.5nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 90W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.8pF |
| RDS(on) | 260mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.042nF |
| Type | N-Channel |
650V 12A 4.5V 90W 260mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS