onsemi NVD14N03RT4G

onsemi · FETs & Power MOSFETs · MPN NVD14N03RT4G

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)1.8nC@10V
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation20.8W
RDS(on)130mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)33pF
Input Capacitance(Ciss)115pF
TypeN-Channel

Technical details

25V 14A 2V 20.8W 130mΩ@4.5V N-Channel Single FETs, MOSFETs RoHS

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