onsemi NVC3S5A51PLZT1G

onsemi · FETs & Power MOSFETs · MPN NVC3S5A51PLZT1G

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Specifications

Gate Charge(Qg)6nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)1.8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)250mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)262pF

Technical details

P-Channel 60V 1.8A 1.2W Surface Mount CPH-3

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