onsemi · FETs & Power MOSFETs · MPN NVC3S5A51PLZT1G
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| Gate Charge(Qg) | 6nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 1.8A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 1.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF |
| RDS(on) | 250mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 262pF |
P-Channel 60V 1.8A 1.2W Surface Mount CPH-3