onsemi · FETs & Power MOSFETs · MPN NVBLS4D0N15MC
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| Gate Charge(Qg) | 90.4nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 187A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.7V |
| Pd - Power Dissipation | 316W |
| Reverse Transfer Capacitance (Crss@Vds) | 27.2pF |
| RDS(on) | 3.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.49nF |
150V 187A 3.7V 316W 3.1mΩ@10V 1 N-channel MO-299A Single FETs, MOSFETs RoHS