onsemi · FETs & Power MOSFETs · MPN NVBLS1D7N10MCTXG
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| Gate Charge(Qg) | 115nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 4.6nF |
| Current - Continuous Drain(Id) | 265A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 303W |
| Reverse Transfer Capacitance (Crss@Vds) | 79pF |
| RDS(on) | 1.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.2nF |
| Type | N-Channel |
100V 265A 4V 303W 1.8mΩ@10V 1 N-channel N-Channel TOLL-8L Single FETs, MOSFETs RoHS