onsemi · FETs & Power MOSFETs · MPN NVBLS1D7N08H
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| Gate Charge(Qg) | 121nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 241.3A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 237.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF |
| RDS(on) | 1.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.675nF |
| Type | N-Channel |
80V 241.3A 4V 237.5W 1.7mΩ@10V 1 N-channel N-Channel H-PSOF-8L Single FETs, MOSFETs RoHS