onsemi · FETs & Power MOSFETs · MPN NVBLS0D7N04M8TXG
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 240A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 357W |
| Reverse Transfer Capacitance (Crss@Vds) | 440pF |
| RDS(on) | 0.59mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12nF |
40V 240A 2V 357W 0.59mΩ@10V 1 N-channel MO-299A Single FETs, MOSFETs RoHS