onsemi · FETs & Power MOSFETs · MPN NVBLS0D5N04M8TXG
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| Gate Charge(Qg) | 220nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 300A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 429W |
| Reverse Transfer Capacitance (Crss@Vds) | 600pF |
| RDS(on) | 0.46mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 15.9nF |
40V 300A 429W 0.46mΩ@10V 1 N-channel MO-299A Single FETs, MOSFETs RoHS